High electron mobility transistor and method for fabricating the same
US11264492B2 · kind B2 · utility
14Cited by
6References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 7, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Aug 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.