Light emitting diode (LED) devices with nucleation layer
US11264530B2 · kind B2 · utility
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21References
13Claims
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Key dates
| Filing date | Dec 19, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Feb 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.