Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11264562B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2020 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Aug 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack includes a reference layer, a tunnel barrier layer, a free layer, and a magnetoelectric multiferroic layer including at least one crystalline grain. The magnetization of the magnetoelectric multiferroic layer may be axial, canted, or in-plane. For axial or canted magnetization of the magnetoelectric multiferroic layer, a deterministic switching of the free layer may be achieved through coupling with the axial component of magnetization of the magnetoelectric multiferroic layer. Alternatively, the in-plane magnetization of the magnetoelectric multiferroic layer may be employed to induce precession of the magnetization angle of the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.