Chemical mechanical polishing slurry composition and method of polishing metal layer
US11267987B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 2, 2020 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Mar 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.