Boron-based capping layers for EUV optics
US11268911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2019 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | May 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/30
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed herein are optical elements and methods for making the same. Such optical elements may comprise a first layer disposed on a substrate, a second layer disposed on the first layer, a terminal layer disposed on the second layer, and a cap layer disposed on the terminal layer. The cap layer may comprise boron, boron nitride, or boron carbide. Such optical elements may be made using a method comprising depositing a first layer using vapor deposition such that the first layer is disposed on a substrate, depositing a second layer using vapor deposition such that the second layer is disposed on the first layer, depositing a terminal layer using vapor deposition such that the terminal layer is disposed on the second layer, and depositing a cap layer comprising boron, boron nitride, or boron carbide using vapor deposition such that the cap layer is disposed on the terminal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.