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US11270928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2020 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Apr 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A diode semiconductor structure is described. In one example, a diode device includes a substrate, a layer of first semiconductor material of a first doping type, a layer of intrinsic semiconductor material, and a layer of second semiconductor material of a second doping type. The diode device also includes a metal contact formed on the layer of first semiconductor material and a metal via formed from a backside of the substrate, through the substrate, and through the layer of first semiconductor material, where the metal via contacts a bottom surface of the metal contact on the layer of first semiconductor material. In this configuration, a direct electrical connection can be achieved between the backside of the substrate and the metal contact on the layer of first semiconductor material without the need for an additional metal connection, such as a metal air bridge, to the metal contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.