Memory device containing selector with current focusing layer and methods of making the same
US11271040B1 · kind B1 · utility
0Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Oct 21, 2020 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Oct 21, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes an ovonic threshold switch (OTS) selector containing a first electrode, a second electrode, an OTS located between the first electrode and the second electrode, and a current focusing layer containing discrete electrically conductive current focusing regions having a width of 30 nm or less located between the first electrode and the OTS, and a memory device located in electrical series with the OTS selector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.