Semiconductor devices and methods of fabricating the same
US11271110B2 · kind B2 · utility
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6References
16Claims
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Assignee
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Key dates
| Filing date | Nov 25, 2019 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Nov 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
Abstract
Semiconductor devices and methods of fabricating the same are provided. The methods of fabricating the semiconductor devices may include providing a substrate including an active pattern protruding from the substrate, forming a first liner layer and a field isolating pattern on the substrate to cover a lower portion of the active pattern, forming a second liner layer on an upper portion of the active pattern and the field isolation pattern, and forming a dummy gate on the second liner layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.