Laser-textured thin-film semiconductors by melting and ablation
US11271121B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2019 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | May 18, 2039 |
Classification
- Technology area (CPC —)General
Abstract
A photovoltaic device and a method of making the photovoltaic device are disclosed. The photovoltaic device may include a semiconductor layer epitaxially grown using a compound semiconductor material, such as a group III-V semiconductor material, wherein a surface of the semiconductor layer is textured via one or more laser pulses of a laser. The photovoltaic device may also include a dielectric layer deposited over the textured surface of the semiconductor layer, and a back metal reflector provided on the dielectric layer. The textured surface extends a path of light traveling through the photovoltaic device to increase absorption of the light within the photovoltaic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.