Multi-junction optoelectronic device
US11271128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2017 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Dec 16, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
An optoelectronic semiconductor device is disclosed. The device comprises a plurality of stacked p-n junctions (e.g., multi junction device). The optoelectronic semiconductor device includes a n-doped layer disposed below the p-doped layer to form a p-n layer such that electric energy is created when photons are absorbed by the p-n layer. Recesses are formed on top of the p-doped layer at the top of the plurality of stacked p-n junctions. The junctions create an offset and an interface layer is formed on top of the p-doped layer at the top of the plurality stacked p-n junctions. The device also includes a window layer disposed below the plurality stacked p-n junctions. In another aspect, one or more optical filters are inserted into a device to enhance its efficiency through photon recycling. The device can be fabricated by epitaxial growth on a substrate and removed from the substrate through a lift off process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.