Gregg Higashi
51Patents
10h-index
43Co-inventors
78Inventor score
Filing activity: Apr 18, 1986 → May 6, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5091767A | Article comprising a lattice-mismatched semiconductor heterostructure | Electricity | 122 | Expired |
| US5308796A | Fabrication of electronic devices by electroless plating of copper onto a metal silicide | Electricity | 62 | Expired |
| US6140187A | Process for forming metal oxide semiconductors including an in situ furnace gate stack with varying silicon nitride deposition rate | Emerging Cross-Sectional Technologies | 62 | Expired |
| US6588437B1 | System and method for removal of material | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5472516A | Process and apparatus for semiconductor device fabrication | Electricity | 17 | Expired |
| US5578273A | Apparatus for continuously controlling the peroxide and ammonia concentration in a bath | Electricity | 15 | Expired |
| US8008174B2 | Continuous feed chemical vapor deposition | Electricity | 14 | Active |
| US9768329B1 | Multi-junction optoelectronic device | Emerging Cross-Sectional Technologies | 12 | Active |
| US6169010A | Method for making integrated circuit capacitor including anchored plug | Electricity | 12 | Expired |
| US6153901A | Integrated circuit capacitor including anchored plug | Electricity | 10 | Expired |
| US9175393B1 | Tiled showerhead for a semiconductor chemical vapor deposition reactor | Electricity | 9 | Active |
| US4701347A | Method for growing patterned metal layers | Emerging Cross-Sectional Technologies | 8 | Expired |
| US8119210B2 | Formation of a silicon oxynitride layer on a high-k dielectric material | Electricity | 8 | Active |
| US9537025B1 | Texturing a layer in an optoelectronic device for improved angle randomization of light | Emerging Cross-Sectional Technologies | 7 | Active |
| US8895845B2 | Photovoltaic device | Emerging Cross-Sectional Technologies | 7 | Active |
| US9136422B1 | Texturing a layer in an optoelectronic device for improved angle randomization of light | Emerging Cross-Sectional Technologies | 6 | Active |
| US8895846B2 | Photovoltaic device | Emerging Cross-Sectional Technologies | 6 | Active |
| US9502594B2 | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching | Emerging Cross-Sectional Technologies | 6 | Active |
| US8937244B2 | Photovoltaic device | Emerging Cross-Sectional Technologies | 6 | Active |
| US10066297B2 | Tiled showerhead for a semiconductor chemical vapor deposition reactor | Electricity | 4 | Active |
| US5096840A | Method of making a polysilicon emitter bipolar transistor | Emerging Cross-Sectional Technologies | 3 | Expired |
| US9212422B2 | CVD reactor with gas flow virtual walls | Chemistry; Metallurgy | 3 | Active |
| US8602707B2 | Methods and apparatus for a chemical vapor deposition reactor | Performing Operations; Transporting | 2 | Active |
| US9834860B2 | Method of high growth rate deposition for group III/V materials | Electricity | 2 | Active |
| US9029687B2 | Photovoltaic device with back side contacts | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.