Radiation source for lithography process
US11275318B2 · kind B2 · utility
1Cited by
15References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 19, 2021 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Feb 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/0094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.