Systems and methods for capture and replacement of hammered word line address
US11276456B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2020 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Jul 21, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/46
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes at least one memory bank comprising a set of redundant word lines, a set of normal word lines, and row hammer refresh logic. The RHR logic comprises a first input to receive a first signal indicative of whether a match was generated at a fuse of the memory device, a second input to receive a redundant row address corresponding to a first location of a memory array of the memory device, a third input to receive a word line address corresponding to a second location of the memory array of the memory device. The RHR logic also comprises an output to transmit at least one first memory address adjacent to the first location or at least one second memory address adjacent to the second location based on a value of the first signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.