High capacity semiconductor device including bifurcated memory module
US11276669B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2020 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Jul 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1434
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed including wafers of stacked integrated memory modules. A semiconductor device of the present technology may include multiple memory array semiconductor wafers, and a CMOS controller wafer, which together, operate as a single, integrated flash memory semiconductor device. In embodiments, the CMOS controller wafer may include semiconductor dies comprising ASIC logic circuits integrated together with memory array logic circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.