Concept for silicon carbide power devices
US11276681B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2018 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Sep 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A modular concept for Silicon Carbide power devices is disclosed where a low voltage module (LVM) is designed separately from a high voltage module (HVM). The LVM having a repeating structure in at least a first direction, the repeating structure repeats with a regular distance in at least the first direction, the HVM comprising a buried grid with a repeating structure in at least a second direction, the repeating structure repeats with a regular distance in at least the second direction, along any possible defined direction. Advantages include faster easier design and manufacture at a lower cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.