Patent · US Active

Concept for silicon carbide power devices

US11276681B2 · kind B2 · utility

2Cited by
13References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 14, 2018
Grant dateMar 15, 2022
Priority date
Expiry dateSep 14, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/811

Abstract

A modular concept for Silicon Carbide power devices is disclosed where a low voltage module (LVM) is designed separately from a high voltage module (HVM). The LVM having a repeating structure in at least a first direction, the repeating structure repeats with a regular distance in at least the first direction, the HVM comprising a buried grid with a repeating structure in at least a second direction, the repeating structure repeats with a regular distance in at least the second direction, along any possible defined direction. Advantages include faster easier design and manufacture at a lower cost.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.