Adolf Schöner
21Patents
5h-index
16Co-inventors
66Inventor score
Filing activity: Apr 24, 1996 → Dec 1, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6104043A | Schottky diode of SiC and a method for production thereof | Electricity | 66 | Expired |
| US5759263A | Device and a method for epitaxially growing objects by cvd | Chemistry; Metallurgy | 14 | Expired |
| US6703294B1 | Method for producing a region doped with boron in a SiC-layer | Electricity | 9 | Expired |
| US5705406A | Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5902117A | PN-diode of SiC and a method for production thereof | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5674765A | Method for producing a semiconductor device by the use of an implanting step | Emerging Cross-Sectional Technologies | 4 | Expired |
| US11114557B2 | Integration of a Schottky diode with a MOSFET | Emerging Cross-Sectional Technologies | 3 | Active |
| US11276681B2 | Concept for silicon carbide power devices | Electricity | 2 | Active |
| US11342423B2 | Method for manufacturing a grid | Electricity | 1 | Active |
| US11575007B2 | Feeder design with high current capability | Electricity | 1 | Active |
| US11158706B2 | Feeder design with high current capability | Electricity | 1 | Active |
| US11581431B2 | Integration of a Schottky diode with a MOSFET | Emerging Cross-Sectional Technologies | 1 | Active |
| US11652099B2 | Concept for silicon for carbide power devices | Electricity | 1 | Active |
| US12034001B2 | Concept for silicon carbide power devices | Electricity | 0 | Active |
| US11923450B2 | MOSFET in SiC with self-aligned lateral MOS channel | Electricity | 0 | Active |
| US12249630B2 | Method for manufacturing a grid | Electricity | 0 | Active |
| US11876116B2 | Method for manufacturing a grid | Electricity | 0 | Active |
| US11444192B2 | MOSFET in sic with self-aligned lateral MOS channel | Electricity | 0 | Active |
| US11996330B2 | Crystal efficient SiC device wafer production | Emerging Cross-Sectional Technologies | 0 | Active |
| US11869940B2 | Feeder design with high current capability | Electricity | 0 | Active |
| US11984497B2 | Integration of a Schottky diode with a MOSFET | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.