Gate controlled lateral bipolar junction/heterojunction transistors

US11276770B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Mankyu Yang · Fishkill, US
• Jagar Singh · Clifton Park, US
• Alexander L. Martin · Saratoga Springs, US
• John J. Ellis-Monaghan · Grand Isle, US

Key dates

• Filing date: Nov 5, 2019
• Grant date: Mar 15, 2022
• Expiry date: Apr 20, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/311

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to gate controlled transistors and methods of manufacture. The structure includes: an emitter region; a collector region; base regions on opposing sides of the emitter region and the collector region; and a gate structure composed of a body region and leg regions, the body region being located between the base regions on opposing sides of the emitter region and the collector region, and the leg regions isolating the base regions from both the emitter region and the collector region.