Mankyu Yang
9Patents
1h-index
15Co-inventors
40Inventor score
Filing activity: Nov 9, 2018 → Jan 5, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11575029B2 | Lateral bipolar junction transistor and method | Electricity | 1 | Active |
| US10790204B2 | Test structure leveraging the lowest metallization level of an interconnect structure | Electricity | 0 | Active |
| US11276770B2 | Gate controlled lateral bipolar junction/heterojunction transistors | Electricity | 0 | Active |
| US11804542B2 | Annular bipolar transistors | Electricity | 0 | Active |
| US10796973B2 | Test structures connected with the lowest metallization levels in an interconnect structure | Electricity | 0 | Active |
| US11652142B2 | Lateral bipolar junction transistors having an emitter extension and a halo region | Electricity | 0 | Active |
| US11588044B2 | Bipolar junction transistor (BJT) structure and related method | Electricity | 0 | Active |
| US12336243B2 | Lateral bipolar transistor with gated collector | Electricity | 0 | Active |
| US11935923B2 | Lateral bipolar transistor with gated collector | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.