Backside illuminated semiconductor photodetection element
US11276794B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2019 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Apr 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/147
Abstract
A semiconductor substrate includes first and second main surfaces opposing each other. The semiconductor substrate includes second semiconductor regions in a side of the second main surface. Each of the second semiconductor regions includes a first region including a textured surface, and a second region where a bump electrode is disposed. The second semiconductor regions are two-dimensionally distributed in a first direction and a second direction orthogonal to each other when viewed in a direction orthogonal to the semiconductor substrate. The first region and the second region are adjacent to each other in a direction crossing the first direction and the second direction. The textured surface of the first region is located toward the first main surface in comparison to the surface of the second region in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.