CMP slurry compositions and methods of fabricating a semiconductor device using the same
US11279852B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Jun 25, 2020 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Jun 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.