Patent · US Active

Semiconductor wafer made of single-crystal silicon and process for the production thereof

US11280026B2 · kind B2 · utility

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11Claims

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Assignee

Siltronic AG · DE

Inventors

Timo Mueller · Burghausen, DE
Andreas Sattler · Trostberg, DE
Robert Kretschmer · Freiberg, DE
Gudrun Kissinger · Lebus, DE
Dawid Kot · Opoczno, PL

Key dates

Filing date	Jun 25, 2018
Grant date	Mar 22, 2022
Priority date	—
Expiry date	Aug 13, 2038

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B25/20
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9×1017 atoms/cm3 and not more than 6.5×107 atoms/cm3 and a nitrogen concentration (new ASTM) of not less than 8×1012 atoms/cm3 and not more than 5×1013 atoms/cm3, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3×108 cm−3 and not more than 4×109 cm−3, as determined by IR tomography.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.