Semiconductor device and method of forming the same
US11282705B2 · kind B2 · utility
2Cited by
17References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2020 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Jun 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate electrode, spacers and a hard mask structure. The spacers are disposed on opposite sidewalls of the gate electrode. The hard mask structure includes a first hard mask layer and a second hard mask layer. A lower portion of the first hard mask layer is disposed between the spacers and on the gate electrode, and a top portion of the first hard mask layer is surrounded by the second hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.