Oversized via as through-substrate-via (TSV) stop layer
US11282769B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2020 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Jun 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a standard via disposed on a first side of a substrate. An oversized via is disposed on the first side of the substrate and is laterally separated from the standard via. The oversized via has a larger width than the standard via. An interconnect wire vertically contacting the oversized via. A through-substrate via (TSV) extends from a second side of the substrate, and through the substrate, to physically contact the oversized via or the interconnect wire. The TSV has a minimum width that is smaller than a width of the oversized via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.