FET device insensitive to noise from drive path
US11282959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2020 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Jul 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A FET device has a substrate, a plurality of repetitive source stripes, a first layout of drain stripe having a first drift region and a first drain region, a second layout of drain stripe having a second drift region and a second drain region, a first drain contactor contacted with the first drain region and connected to a drain terminal, a second drain contactor contacted with the second drain region and connected to a first gate terminal, a source contactor contacted with a source region in each of the plurality of repetitive source stripes and connected to a source terminal, a first gate region positioned between the source region and the first drain region and connected to the first gate terminal, and a second gate region positioned between the source region and the second drain region and connected to a second gate terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.