Silicon carbide detector and preparation method therefor

US11282977B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Xingye Zhou · Shijiazhuang, CN
• Zhihong Feng · Shijiazhuang, CN
• Yuanjie Lv · Shijiazhuang, CN
• Xin Tan · Beijing, CN
• Yuangang Wang · Nanhu, CN
• Xubo Song · Shijiazhuang, CN
• Jia Li · Shijiazhuang, CN
• Yulong Fang · Shijiazhuang, CN

Key dates

• Filing date: Sep 25, 2020
• Grant date: Mar 22, 2022
• Expiry date: Dec 1, 2040

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

The disclosure provides a silicon carbide detector and a preparation method therefor. The silicon carbide detector comprises: a wafer, the wafer sequentially comprises, from bottom to top, a substrate, a silicon carbide P+ layer, an N-type silicon carbide insertion layer, an N+ type silicon carbide multiplication layer, an N-type silicon carbide absorption layer and a silicon carbide N+ layer; the doping concentration of the N-type silicon carbide insertion layer gradually increases from bottom to top, and the doping concentration of the N-type silicon carbide absorption layer gradually decreases from bottom to top; a mesa is etched on the wafer, and the mesa is etched to an upper surface of the silicon carbide P+ layer; an N-type electrode is arranged on an upper surface of the mesa, and a P-type electrode is arranged on an upper surface of a non-mesa region.