Semiconductor device and method for fabricating the same
US11283007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2020 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Oct 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
Abstract
A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming an etch stop layer on the first IMD layer; forming a second IMD layer on the etch stop layer; forming a patterned hard mask on the second IMD layer; performing a first etching process to form a contact hole in the second IMD layer for exposing the etch stop layer; performing a second etching process to remove the patterned hard mask; performing a third etching process to remove the etch stop layer and the first IMD layer for exposing the MTJ; and forming a metal interconnection in the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.