Patent · US Active

Flash memory block retirement policy

US11288149B2 · kind B2 · utility

0Cited by
18References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 7, 2020
Grant dateMar 29, 2022
Priority date
Expiry dateOct 7, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/0483
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Devices and techniques for a flash memory block retirement policy are disclosed herein. In an example embodiment, a first memory block is provisionally removed from service in response to encountering read errors in the first memory block. Memory pages of the first memory block are tested in a second mode comprising reading memory pages at different read voltages. A raw bit error rate (RBER) or a read window budget (RWB) is determined for memory pages at the different read voltages and the provisionally removed first memory block is returned to service or retired based on the determined RBER or the RWB.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.