SOT-MRAM with shared selector
US11289143B2 · kind B2 · utility
5Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2020 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Aug 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.