William J. Gallagher
83Patents
16h-index
71Co-inventors
87Inventor score
Filing activity: Jun 8, 1988 → May 30, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5640343A | Magnetic memory array using magnetic tunnel junction devices in the memory cells | Physics | 770 | Expired |
| US5650958A | Magnetic tunnel junctions with controlled magnetic response | Physics | 325 | Expired |
| US5991193A | Voltage biasing for magnetic ram with magnetic tunnel memory cells | Physics | 194 | Expired |
| US5841692A | Magnetic tunnel junction device with antiferromagnetically coupled pinned layer | Physics | 173 | Expired |
| US6072718A | Magnetic memory devices having multiple magnetic tunnel junctions therein | Physics | 158 | Expired |
| US6104633A | Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices | Physics | 108 | Expired |
| US5055158A | Planarization of Josephson integrated circuit | Emerging Cross-Sectional Technologies | 64 | Expired |
| US6226160A | Small area magnetic tunnel junction devices with low resistance and high magnetoresistance | Electricity | 51 | Expired |
| US6452764B1 | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices | Electricity | 38 | Expired |
| US6590750B2 | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices | Electricity | 29 | Expired |
| US6368878B1 | Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices | Physics | 28 | Expired |
| US8102236B1 | Thin film inductor with integrated gaps | Electricity | 20 | Active |
| US4831421A | Superconducting device | Electricity | 19 | Expired |
| US8717136B2 | Inductor with laminated yoke | Emerging Cross-Sectional Technologies | 18 | Active |
| US9437668B1 | High resistivity soft magnetic material for miniaturized power converter | Chemistry; Metallurgy | 16 | Active |
| US4962086A | High T.sub.c superconductor - gallate crystal structures | Emerging Cross-Sectional Technologies | 16 | Expired |
| US8208288B2 | Hybrid superconducting-magnetic memory cell and array | Electricity | 15 | Active |
| US8547732B2 | Hybrid superconducting-magnetic memory cell and array | Electricity | 13 | Active |
| US9331076B2 | Group III nitride integration with CMOS technology | Electricity | 10 | Active |
| US9324495B2 | Planar inductors with closed magnetic loops | Electricity | 10 | Active |
| US5646095A | Selective insulation etching for fabricating superconductor microcircuits | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7492631B1 | Methods involving resetting spin-torque magnetic random access memory | Physics | 7 | Active |
| US7505308B1 | Systems involving spin-transfer magnetic random access memory | Physics | 6 | Active |
| US9590026B2 | High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors | Electricity | 5 | Active |
| US11289143B2 | SOT-MRAM with shared selector | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.