Electrostatic discharge device

US11289471B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• You Li · South Burlington, US
• Alain Loiseau · Williston, US
• Souvick Mitra · South Burlington, US
• Tsung-Che Tsai · Hsinchu, TW
• Robert J. Gauthier, Jr. · South Burlington, US
• Meng Miao · Williston, US

Key dates

• Filing date: Aug 24, 2020
• Grant date: Mar 29, 2022
• Expiry date: Aug 24, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/601

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to an electrostatic discharge (ESD) device and methods of manufacture. The structure (ESD device) includes: a trigger collector region having fin structures of a first dopant type, a collector region having fin structures in a well of a second dopant type and further including a lateral ballasting resistance; an emitter region having a well of the second dopant type and fin structures of the first dopant type; and a base region having a well and fin structures of the second dopant type.