You Li
26Patents
3h-index
25Co-inventors
59Inventor score
Filing activity: May 29, 2014 → Sep 7, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10008491B1 | Low capacitance electrostatic discharge (ESD) devices | Electricity | 7 | Active |
| US10290626B1 | High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the same | Electricity | 4 | Active |
| US10096587B1 | Fin-based diode structures with a realigned feature layout | Electricity | 4 | Active |
| US9391065B1 | Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode | Electricity | 3 | Active |
| US9425185B2 | Self-healing electrostatic discharge power clamp | Emerging Cross-Sectional Technologies | 2 | Active |
| US9704852B2 | Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode | Electricity | 1 | Active |
| US11804481B2 | Fin-based and bipolar electrostatic discharge devices | Electricity | 1 | Active |
| US10361293B1 | Vertical fin-type devices and methods | Electricity | 1 | Active |
| US11791626B2 | Electrostatic discharge clamp structures | Electricity | 0 | Active |
| US12107083B2 | Fin-based and bipolar electrostatic discharge devices | Electricity | 0 | Active |
| US11335674B2 | Diode triggered silicon controlled rectifier (SCR) with hybrid diodes | Electricity | 0 | Active |
| US11289471B2 | Electrostatic discharge device | Electricity | 0 | Active |
| US10741685B2 | Semiconductor devices having a fin channel arranged between source and drift regions and methods of manufacturing the same | Electricity | 0 | Active |
| US11444076B2 | Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor well | Electricity | 0 | Active |
| US9882377B2 | Electrostatic discharge protection solutions | Electricity | 0 | Active |
| US10297589B2 | Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode | Electricity | 0 | Active |
| US11349304B2 | Structure and method for controlling electrostatic discharge (ESD) event in resistor-capacitor circuit | Electricity | 0 | Active |
| US11201466B2 | Electrostatic discharge clamp structures | Electricity | 0 | Active |
| US12287721B2 | Storage management and usage optimization using workload trends | Physics | 0 | Active |
| US11769767B2 | Diode triggered silicon controlled rectifier | Electricity | 0 | Active |
| US12068308B2 | Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor well | Electricity | 0 | Active |
| US10347622B2 | Silicon-controlled rectifiers having a cathode coupled by a contact with a diode trigger | Electricity | 0 | Active |
| US10541236B2 | Electrostatic discharge devices with reduced capacitance | Electricity | 0 | Active |
| US10692852B2 | Silicon-controlled rectifiers with wells laterally isolated by trench isolation regions | Electricity | 0 | Active |
| US11631759B2 | Electrostatic discharge protection devices and methods for fabricating electrostatic discharge protection devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.