Passive devices over polycrystalline semiconductor fins
US11289474B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2020 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Jun 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6627
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures including a passive device and methods of forming such structures. Multiple fins are positioned on a substrate, and an interconnect structure is positioned over the substrate. The fins contain a polycrystalline semiconductor material, and the interconnect structure includes a passive device that is positioned over the fins. The passive device may be, for example, an inductor or a transmission line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.