Semiconductor device and method
US11289480B2 · kind B2 · utility
1Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2020 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Sep 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
Abstract
A method includes forming a first semiconductor fin in a substrate, forming a metal gate structure over the first semiconductor fin, removing a portion of the metal gate structure to form a first recess in the metal gate structure that is laterally separated from the first semiconductor fin by a first distance, wherein the first distance is determined according to a first desired threshold voltage associated with the first semiconductor fin, and filling the recess with a dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.