Semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device
US11289498B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2020 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Feb 26, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.