Selective etching to increase threshold voltage spread
US11289578B2 · kind B2 · utility
4Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2019 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Apr 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a gate dielectric comprising a portion extending on a semiconductor region, forming a barrier layer comprising a portion extending over the portion of the gate dielectric, forming a work function tuning layer comprising a portion over the portion of the barrier layer, doping a doping element into the work function tuning layer, removing the portion of the work function tuning layer, thinning the portion of the barrier layer, and forming a work function layer over the portion of the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.