Semiconductor device and method
US11289603B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2020 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Jul 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacture are provided which utilizes metallic seeds to help crystallize a ferroelectric layer. In an embodiment a metal layer and a ferroelectric layer are formed adjacent to each other and then the metal layer is diffused into the ferroelectric layer. Once in place, a crystallization process is performed which utilizes the material of the metal layer as seed crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.