Solid-state imaging device
US11289618B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 12, 2018 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Jul 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/011
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device includes a plurality of pixels two-dimensionally arranged on a semiconductor substrate. Each of the pixels includes at least one shallow light receiving portion formed near a surface of the semiconductor substrate and at least one deep light receiving portion formed under the shallow light receiving portion. One or more of the shallow light receiving portions and the deep light receiving portion are connected to each other so as to form a second light receiving portion. The rest of the shallow light receiving portions forms a first light receiving portion. Excess electric charge in the first light receiving portion is discharged to the deep light receiving portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.