Water assisted highly pure ruthenium thin film deposition

US11293093B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Feng Q. Liu · San Jose, US
• Feng Chen · Hoffman Estates, US
• Jeffrey W. Anthis · San Jose, US
• David Thompson · San Jose, US
• Mei Chang · Taipei, TW

Key dates

• Filing date: Jan 5, 2018
• Grant date: Apr 5, 2022
• Expiry date: Jun 29, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76838
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.