Structure comprising single-crystal semiconductor islands and process for making such a structure
US11295950B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2017 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Sep 21, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure that can be used to manufacture at least one active layer made of a III-V material thereon includes a substrate comprising a carrier having a main face, a dielectric layer located on the main face of the carrier, and a plurality of single-crystal semiconductor islands located directly on the dielectric layer. The islands have an upper surface in order to serve as a seed surface for the growth of the active layer. The structure further comprises a seed layer located between the single-crystal semiconductor islands, directly on the portion of the dielectric layer that is not covered by the islands, without masking the upper surface of the islands, so that the dielectric layer is not exposed to the external environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.