Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors
US11295962B2 · kind B2 · utility
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Key dates
| Filing date | Jul 10, 2019 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Jul 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/1395
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.