Electronic circuit with electrostatic discharge protection

US11296072B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Thomas Bedecarrats · Grenoble, FR
• Louise De Conti · Grenoble, FR
• Philippe Galy · Meylan, FR

Key dates

• Filing date: Jun 27, 2019
• Grant date: Apr 5, 2022
• Expiry date: Nov 20, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/611

Abstract

A semiconductor substrate includes a doped region having an upper surface. The doped region may comprise a conduction terminal of a diode (such as cathode) or a transistor (such as a drain). A silicide layer is provided at the doped region. The silicide layer has an area that only partially covers an area of the upper surface of the doped region. The partial area coverage facilitates modulating the threshold voltage and/or leakage current of an integrated circuit device.