High reliability polysilicon components

US11296075B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Robert M. Higgins · Manasquan, US
• Henry Litzmann Edwards · Garland, US
• Xiaoju Wu · Irving, US
• Shariq Arshad · Sachse, US
• Li Wang · Plano, US
• Jonathan Philip Davis · Allen, US
• Tathagata Chatterjee · Allen, US

Key dates

• Filing date: Aug 31, 2018
• Grant date: Apr 5, 2022
• Expiry date: Aug 31, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure introduces, among other things, an electronic device, e.g. an integrated circuit (IC). The IC includes a semiconductor substrate comprising a first doped layer of a first conductivity type. A second doped layer of the first conductivity type is located within the first doped layer. The second doped layer has first and second layer portions with a greater dopant concentration than the first doped layer, with the first layer portion being spaced apart from the second layer portion laterally with respect to a surface of the substrate. The IC further includes a lightly doped portion of the first doped layer, the lightly doped portion being located between the first and second layer portions. A dielectric isolation structure is located between the first and second layer portions, and directly contacts the lightly doped portion.