Method for the integration of monolithic thin film radiation detector systems
US11296140B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 13, 2018 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Feb 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1698
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A thin film radiation detection device includes a photosensitive p-n diode, a polysilicon thin film transistor (TFT), a radiation detection layer, and a substrate. The photosensitive p-n diode and the TFT are formed on the substrate. The radiation detection layer is formed above the substrate and receives multiple radiations. The photosensitive p-n diode receives a conversion output signal from the radiation detection layer and generates a detector signal. The TFT generates an amplified signal based on the detector signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.