Manuel Quevedo-Lopez
11Patents
3h-index
19Co-inventors
53Inventor score
Filing activity: Nov 21, 2002 → Apr 13, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6809370B1 | High-k gate dielectric with uniform nitrogen profile and methods for making the same | Electricity | 51 | Expired |
| US7115530B2 | Top surface roughness reduction of high-k dielectric materials using plasma based processes | Electricity | 34 | Expired |
| US7045436B2 | Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI) | Electricity | 9 | Expired |
| US6933235B2 | Method for removing contaminants on a substrate | Electricity | 2 | Expired |
| US7943479B2 | Integration of high-k metal gate stack into direct silicon bonding (DSB) hybrid orientation technology (HOT) pMOS process flow | Electricity | 1 | Active |
| US7625807B2 | Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication | Electricity | 1 | Active |
| US7199021B2 | Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication | Electricity | 1 | Expired |
| US7799632B2 | Method of forming an isolation structure by performing multiple high-density plasma depositions | Electricity | 1 | Active |
| US8816446B2 | Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal | Electricity | 0 | Active |
| US11296140B2 | Method for the integration of monolithic thin film radiation detector systems | Electricity | 0 | Active |
| US8058122B2 | Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.