Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
US11299804B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2019 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | May 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.