Electron beam probing techniques and related structures
US11302589B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2019 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Jul 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for electron beam probing techniques and related structures are described to enable inline testing of memory device structures. Conductive loops may be formed, some of which may be grounded and others of which may be electrically floating in accordance with a predetermined pattern. The loops may be scanned with an electron beam and image analysis techniques may be used to generate an optical pattern. The generated optical pattern may be compared to an expected optical pattern, which may be based on the predetermined pattern of grounded and floating loops. An electrical defect may be determined based on any difference between the generated optical pattern and the expected optical pattern. For example, if a second loop appears as having a brightness corresponding to a grounded loop, this may indicate that an unintended short exists. Fabrication techniques may be adjusted for subsequent devices to correct identified defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.