Silicon carbide power device with MOS structure and stressor

US11302811B2 · kind B2 · utility

Assignee

• Hitachi Energy Switzerland AG · CH

Inventors

• Marco Bellini · Schlieren, CH
• Lars Knoll · Cokeville Municipal Airport access, CH
• Lukas Kranz · Zürich, CH

Key dates

• Filing date: Dec 16, 2019
• Grant date: Apr 12, 2022
• Expiry date: Dec 16, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/116

Abstract

A silicon carbide power device, e.g., a vertical power MOSFET or an IGBT, includes a silicon carbide wafer. A first stressor and a second stressor are arranged in the silicon carbide wafer at a first main side. A first channel region, a first portion of a drift layer and a second channel region are laterally arranged between the first stressor and the second stressor in a second lateral direction parallel to the first main side and perpendicular to the first lateral direction. A stress can be introduced by the first stressor and the second stressor in the first channel region and in the second channel region.