Patent · US Active

Method of assembly by direct bonding between two elements, each element comprising portions of metal and dielectric materials

US11305372B2 · kind B2 · utility

0Cited by
12References
17Claims
0Family size

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Key dates

Filing dateOct 2, 2014
Grant dateApr 19, 2022
Priority date
Expiry dateNov 24, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2225/06513
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Method of assembly of a first element (I) and a second element (II) each having an assembly surface, at least one of the assembly surfaces comprising recessed metal portions (6, 106) surrounded by dielectric materials (4, 104) comprising:A) a step to bring the two assembly surfaces into contact without application of pressure such that direct bonding is obtained between the assembly surfaces, said first and second assemblies (I, II) forming a stack with a given thickness (e),B) a heat treatment step of said stack during which the back faces (10, 110) of the first (I) and the second (II) elements are held in position so that they are held at a fixed distance (E) between the given stack thickness+/−2 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.