Molten ion conductive salt/silicon interface for decreased interfacial resistance
US11309585B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2019 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Oct 30, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An interfacial additive layer for decreasing the interfacial resistance/impedance of a silicon based electrode-containing device such as, for example, an energy storage device or a micro-resistor, is disclosed. The interfacial additive layer, which is composed of a molten lithium containing salt, is formed between a silicon based electrode and a solid polymer electrolyte layer of the device. The presence of such an interfacial additive layer increases the ion and electron mobile dependent performances at the silicon based electrode interface due to significant decrease in the resistance/impedance that is observed at the respective interface as well as the impedance observed in the bulk of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.