Method of forming a thin film of tantalum with low resistivity
US11313030B2 · kind B2 · utility
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8References
18Claims
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Key dates
| Filing date | Jul 31, 2020 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jul 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a low-resistivity tantalum thin film having the following steps: depositing a tantalum layer on a substrate, the tantalum of the layer having a β phase, treating the deposited tantalum layer by exposure to a radio frequency hydrogen plasma, such that the layer has tantalum in a mixed β-α phase, at least partially desorbing the hydrogen by carrying out at least one of the following steps: exposure to a radio frequency inert gas plasma, and thermal annealing. The treatment step being configured such that the tantalum layer is subjected to temperatures of less than or equal to 300° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.